onsemi NVMFS6H818N Type N-Channel MOSFET, 123 A, 80 V Enhancement, 5-Pin DFN
- N° de stock RS:
- 178-4309
- Référence fabricant:
- NVMFS6H818NT1G
- Fabricant:
- onsemi
Sous-total (1 bobine de 1500 unités)*
1 753,50 €
(TVA exclue)
2 121,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 1,169 € | 1 753,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4309
- Référence fabricant:
- NVMFS6H818NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NVMFS6H818N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NVMFS6H818N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H818NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
DC/DC converter
Load Switch
Liens connexes
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NVMFS6H818NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NTMFS6H818NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NTMFS6H836NT1G
- onsemi N-Channel MOSFET 40 V, 5-Pin DFN NVMFS5C456NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NVMFS6H800NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NVMFS6H801NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NTMFS6H800NT1G
- onsemi N-Channel MOSFET 80 V, 5-Pin DFN NTMFS6H801NT1G
