onsemi NVMFS6H801N Type N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN NVMFS6H801NT1G
- N° de stock RS:
- 178-4450
- Référence fabricant:
- NVMFS6H801NT1G
- Fabricant:
- onsemi
Sous-total (1 paquet de 10 unités)*
8,47 €
(TVA exclue)
10,25 €
(TVA incluse)
Ajouter 90 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 480 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 0,847 € | 8,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4450
- Référence fabricant:
- NVMFS6H801NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFS6H801N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 166W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFS6H801N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 166W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H801NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
DC/DC converter
Load Switch
Liens connexes
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN NTMFS6H801NT1G
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H
- onsemi NVMFS6H824N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6D1N08H Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
