onsemi NTMFS6H801N Type N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN NTMFS6H801NT1G
- N° de stock RS:
- 172-8986
- Référence fabricant:
- NTMFS6H801NT1G
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
3,63 €
(TVA exclue)
4,39 €
(TVA incluse)
Ajouter 105 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 2 775 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 0,726 € | 3,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 172-8986
- Référence fabricant:
- NTMFS6H801NT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS6H801N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1 mm | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS6H801N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 175°C | ||
Width 5.1 mm | ||
Height 1.1mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Commercial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
Motor Control
Load Switch
DC/DC converter
Synchronous Rectifier
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