Vishay SQ Rugged N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD100N04-3M6L_GE3

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Informations sur le stock actuellement non accessibles
N° de stock RS:
170-8410
Référence fabricant:
SQD100N04-3M6L_GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Transistor Material

Si

Typical Gate Charge @ Vgs

85 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Pays d'origine :
TW

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor

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