onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92

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Sous-total (1 bobine de 10000 unités)*

1 170,00 €

(TVA exclue)

1 420,00 €

(TVA incluse)

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  • Expédition à partir du 19 mai 2026
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Unité
Prix par unité
la bobine*
10000 +0,117 €1 170,00 €

*Prix donné à titre indicatif

N° de stock RS:
169-8553
Référence fabricant:
2N7000
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

TO-92

Series

2N7000

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.88V

Maximum Power Dissipation Pd

400mW

Typical Gate Charge Qg @ Vgs

0.8nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.2mm

Height

5.33mm

Width

4.19 mm

Standards/Approvals

No

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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