onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000TA
- N° de stock RS:
- 739-0224
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
2,53 €
(TVA exclue)
3,06 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,253 € | 2,53 € |
| 100 - 990 | 0,16 € | 1,60 € |
| 1000 - 2490 | 0,148 € | 1,48 € |
| 2500 - 9990 | 0,132 € | 1,32 € |
| 10000 + | 0,128 € | 1,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 739-0224
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.19mm | |
| Length | 5.2mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.33mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.19mm | ||
Length 5.2mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 5.33mm | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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