onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000TA
- N° de stock RS:
- 739-0224
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
2,53 €
(TVA exclue)
3,06 €
(TVA incluse)
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,253 € | 2,53 € |
| 100 - 990 | 0,16 € | 1,60 € |
| 1000 - 2490 | 0,148 € | 1,48 € |
| 2500 - 9990 | 0,132 € | 1,32 € |
| 10000 + | 0,128 € | 1,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 739-0224
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 5.2mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.19mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 5.2mm | ||
Number of Elements per Chip 1 | ||
Width 4.19mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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