onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000-D26Z
- N° de stock RS:
- 184-4881
- Référence fabricant:
- 2N7000-D26Z
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 100 unités)*
20,00 €
(TVA exclue)
24,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 900 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 2 000 unité(s) expédiée(s) à partir du 17 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 400 | 0,20 € | 20,00 € |
| 500 - 900 | 0,173 € | 17,30 € |
| 1000 + | 0,15 € | 15,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-4881
- Référence fabricant:
- 2N7000-D26Z
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7000 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.88V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.33mm | |
| Length | 5.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7000 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.88V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Operating Temperature 150°C | ||
Height 5.33mm | ||
Length 5.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
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