onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000-D26Z
- N° de stock RS:
- 184-4881
- Référence fabricant:
- 2N7000-D26Z
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 100 unités)*
20,00 €
(TVA exclue)
24,00 €
(TVA incluse)
Ajouter 400 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 2 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 2 000 unité(s) expédiée(s) à partir du 17 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 400 | 0,20 € | 20,00 € |
| 500 - 900 | 0,173 € | 17,30 € |
| 1000 + | 0,15 € | 15,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-4881
- Référence fabricant:
- 2N7000-D26Z
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Width | 4.19 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Height 5.33mm | ||
Width 4.19 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
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