Microchip 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000-G

Voir l’ensemble des MOSFETs
Offre groupée disponible

Sous-total (1 paquet de 25 unités)*

9,20 €

(TVA exclue)

11,125 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
  • Plus 3 050 unité(s) expédiée(s) à partir du 07 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
le paquet*
25 - 750,368 €9,20 €
100 +0,338 €8,45 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
177-9760
Référence fabricant:
2N7000-G
Fabricant:
Microchip
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

TO-92

Series

2N7000

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.3Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1W

Forward Voltage Vf

0.85V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

4.06 mm

Height

5.33mm

Length

5.08mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-38-475

Pays d'origine :
TW

Microchip Technology MOSFET


The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has drain-source resistance of 5ohms at a gate-source voltage of 10V. It has continuous drain current of 200mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications


• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC

Liens connexes