onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000TA
- N° de stock RS:
- 124-1310
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 2000 unités)*
178,00 €
(TVA exclue)
216,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 4 000 unité(s) expédiée(s) à partir du 25 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 - 4000 | 0,089 € | 178,00 € |
| 6000 + | 0,085 € | 170,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1310
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7000 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.19 mm | |
| Height | 5.33mm | |
| Length | 5.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7000 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Width 4.19 mm | ||
Height 5.33mm | ||
Length 5.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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