onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000TA
- N° de stock RS:
- 124-1310
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 2000 unités)*
178,00 €
(TVA exclue)
216,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 4 000 unité(s) expédiée(s) à partir du 14 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 - 4000 | 0,089 € | 178,00 € |
| 6000 + | 0,085 € | 170,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1310
- Référence fabricant:
- 2N7000TA
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Forward Voltage Vf | 0.88V | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Width | 4.19 mm | |
| Standards/Approvals | No | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Forward Voltage Vf 0.88V | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Width 4.19 mm | ||
Standards/Approvals No | ||
Height 5.33mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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