Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF
- N° de stock RS:
- 827-4088
- Référence fabricant:
- IRFR9024NTRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
16,52 €
(TVA exclue)
19,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 120 unité(s) expédiée(s) à partir du 21 septembre 2026
- Plus 860 unité(s) expédiée(s) à partir du 21 septembre 2026
- Plus 9 620 unité(s) expédiée(s) à partir du 28 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,826 € | 16,52 € |
| 100 - 180 | 0,644 € | 12,88 € |
| 200 - 480 | 0,603 € | 12,06 € |
| 500 - 980 | 0,561 € | 11,22 € |
| 1000 + | 0,521 € | 10,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-4088
- Référence fabricant:
- IRFR9024NTRPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF
Features & Benefits
Applications
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