Infineon HEXFET Type N-Channel MOSFET, 72 A, 100 V Enhancement, 3-Pin TO-220

N° de stock RS:: 165-5802
Référence fabricant:: IRFI4110GPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 72 A, 100 V Enhancement, 3-Pin TO-220

Sous-total (1 tube de 50 unités)*

144,60 €

(TVA exclue)

174,95 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 2 050 unité(s) expédiée(s) à partir du 12 janvier 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le tube*
50 +	2,892 €	144,60 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5802
Référence fabricant:: IRFI4110GPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	72A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	61W
	Typical Gate Charge Qg @ Vgs	190nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	16.13mm
	Length	10.75mm
	Width	4.83 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 72A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 61W
	Typical Gate Charge Qg @ Vgs 190nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 16.13mm
	Length 10.75mm
	Width 4.83 mm
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 72A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IRFI4110GPBF

This n-channel MOSFET is designed for high-performance applications, providing efficient current handling and high voltage tolerance. It is essential in various electronic devices and ensures robust operation in challenging environments. Its performance in power switching and thermal management makes it a preferred component in the automation, electronics, and mechanical sectors.

Features & Benefits

• Continuous drain current capability of 72A

• Low Rds(on) resistance for enhanced operational efficiency

• Enhancement mode for effective performance

• Maximum drain-source voltage rating of 100V

• Excellent thermal management up to +175°C

• Improved avalanche ruggedness for added reliability

Applications

• Suitable for high-efficiency synchronous rectification

• Ideal for uninterruptible power supply systems

• Compatible with high-speed power switching

• Utilised in hard-switched and high-frequency circuits

What is the maximum continuous drain current for your application?

The continuous drain current is rated at 72A under optimal conditions, making it suitable for demanding applications.

What is the significance of the gate threshold voltage?

The gate threshold voltage ranges from 2V to 4V, enabling precise control of the switching characteristics.

How does the MOSFET manage thermal performance?

It has a maximum operating temperature rating of +175°C, which supports durability in high-temperature environments.

What advantages does low Rds(on) offer in device performance?

Low Rds(on) decreases power losses during switching, leading to improved overall efficiency.

Can this product handle high-frequency circuits?

Yes, it is specifically designed for hard-switched and high-frequency applications, ensuring consistent performance.