Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3

N° de stock RS:: 165-6919
Référence fabricant:: SI3993CDV-T1-GE3
Fabricant:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3

Sous-total (1 bobine de 3000 unités)*

492,00 €

(TVA exclue)

594,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 23 novembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,164 €	492,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-6919
Référence fabricant:: SI3993CDV-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	188mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	5.2nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.4W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Length	3.1mm
	Width	1.7mm
	Standards/Approvals	No
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 188mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 5.2nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.4W
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Length 3.1mm
	Width 1.7mm
	Standards/Approvals No
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

Pays d'origine :: CN

Vishay TrenchFET Series Power MOSFET, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SI3993CDV-T1-GE3

This power MOSFET is a surface-mount P-channel switching transistor designed for compact, low-power applications. It operates within a modest voltage range and is intended for efficient switching duties where a dual-element, isolated transistor configuration is required. The component is supplied in a slim TSOP package suited to board-level integration in electronic control systems.

Features and Benefits:

• 30V maximum drain voltage enables safe low-voltage switching
• 2.3A continuous drain current supports moderate load currents
• 188mΩ low RDS(on) reduces conduction losses
• 5.2nC typical gate charge affords fast gate switching
• 1.4W power dissipation allows duty-cycled operation
• Isolated dual-element design enables split-channel implementations

Applications

• Suitable for low-voltage motor control in automation modules
• Ideal for power switching in Compact power supplies
• Used for load switching in embedded control systems
• Can be used for polarity control in battery management circuits

What thermal range can be expected during operation?

The device is rated to operate between -55°C and 150°C, allowing use across extended temperature environments.

How does the package support board assembly?

The TSOP surface-mount format with six pins facilitates automated placement and soldering on densely populated boards.

Can the gate handle higher control voltages?

The gate should not exceed 20V maximum to avoid damaging the gate oxide and to maintain specified performance.

Does the device support multi-element configurations on a single chip?

Yes, it contains two elements per chip in an isolated configuration, enabling paired switching arrangements without external isolation.