Infineon OptiMOS 3 N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1
- N° de stock RS:
- 145-8766
- Référence fabricant:
- BSS606NH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 1000 unités)*
213,00 €
(TVA exclue)
258,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 000 unité(s) expédiée(s) à partir du 18 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,213 € | 213,00 € |
| 2000 - 4000 | 0,202 € | 202,00 € |
| 5000 + | 0,189 € | 189,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8766
- Référence fabricant:
- BSS606NH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-89 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.5mm | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-89 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.5mm | ||
Height 1.5mm | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Infineon OptiMOS 3 Series MOSFET, 60V Maximum Drain Source Voltage, 3.2A Maximum Continuous Drain Current - BSS606NH6327XTSA1
This n-channel MOSFET is a surface-mount semiconductor designed to control and switch DC power in compact electronic systems. It operates across a wide temperature span suitable for demanding environments and is intended for applications requiring medium-voltage switching with modest continuous current capacity. The device is supplied in a small SOT-89 package tailored for PCB-mounted power stages.
Features and Benefits:
• 60V drain-source withstand voltage allows safe medium-voltage switching
• 90mΩ low RDS(on) reduces conduction losses in power paths
• 3.2A continuous drain current supports moderate load driving
• 1.1V forward voltage minimises voltage drop in diode conduction
• 3.7nC typical gate charge enables efficient switching control
• 20V gate tolerance permits flexible gate-drive voltages
• 90mΩ low RDS(on) reduces conduction losses in power paths
• 3.2A continuous drain current supports moderate load driving
• 1.1V forward voltage minimises voltage drop in diode conduction
• 3.7nC typical gate charge enables efficient switching control
• 20V gate tolerance permits flexible gate-drive voltages
Applications
• Suitable for automotive auxiliary power circuits
• Ideal for DC/DC converter switch stages
• Used in motor-control gate driver interfaces
• Can be used for load switching in telematics modules
• Appropriate for power distribution in embedded systems
• Ideal for DC/DC converter switch stages
• Used in motor-control gate driver interfaces
• Can be used for load switching in telematics modules
• Appropriate for power distribution in embedded systems
What package dimensions and form factor does it use?
The component is provided in a compact SOT-89 surface-mount body measuring 4.5 x 2.5 x 1.5mm for tight PCB layouts.
How does it cope with extreme thermal environments?
It is rated to function from -55°C up to 150°C, enabling operation in high-temperature and cold-climate conditions.
What pin configuration and mounting style should designers expect?
The part has four pins and is intended for surface mounting, simplifying placement in automated assembly processes.
Which channel conduction mode does it employ and how does that affect circuit behaviour?
It uses an N-type enhancement-mode channel, requiring a positive gate drive to establish conduction for typical low-side switching.
Liens connexes
- Infineon OptiMOS 3 N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1
- Infineon OptiMOS N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
- Infineon OptiMOS N-Channel MOSFET 150 V Enhancement, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1
- Infineon OptiMOS N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6433XTMA1
- Infineon OptiMOS N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1