Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89
- N° de stock RS:
- 145-8766
- Référence fabricant:
- BSS606NH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 1000 unités)*
187,00 €
(TVA exclue)
226,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 1 000 unité(s) expédiée(s) à partir du 05 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,187 € | 187,00 € |
| 2000 - 4000 | 0,177 € | 177,00 € |
| 5000 + | 0,166 € | 166,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8766
- Référence fabricant:
- BSS606NH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 3 | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.5 mm | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 3 | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.5 mm | ||
Height 1.5mm | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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