Infineon CoolMOS CE Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin IPAK
- N° de stock RS:
- 217-2584
- Référence fabricant:
- IPU60R1K5CEAKMA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 75 unités)*
12,975 €
(TVA exclue)
15,675 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,173 € | 12,98 € |
| 150 - 300 | 0,166 € | 12,45 € |
| 375 - 675 | 0,162 € | 12,15 € |
| 750 - 1800 | 0,158 € | 11,85 € |
| 1875 + | 0,154 € | 11,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2584
- Référence fabricant:
- IPU60R1K5CEAKMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 49W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 49W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Liens connexes
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- Infineon CoolMOS™ CE N-Channel MOSFET 700 V, 3-Pin IPAK IPSA70R2K0CEAKMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 650 V, 3-Pin IPAK IPS65R1K0CEAKMA2
- Infineon CoolMOS™ CE N-Channel MOSFET 700 V, 3-Pin IPAK IPSA70R950CEAKMA1