ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001
- N° de stock RS:
- 144-2255
- Référence fabricant:
- BSM300D12P2E001
- Fabricant:
- ROHM
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 144-2255
- Référence fabricant:
- BSM300D12P2E001
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | BSM | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 1875W | |
| Maximum Operating Temperature | 150°C | |
| Height | 17mm | |
| Length | 152mm | |
| Width | 57.95 mm | |
| Number of Elements per Chip | 2 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series BSM | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 1875W | ||
Maximum Operating Temperature 150°C | ||
Height 17mm | ||
Length 152mm | ||
Width 57.95 mm | ||
Number of Elements per Chip 2 | ||
- Pays d'origine :
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Liens connexes
- ROHM BSM 2 Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM300D12P2E001
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM180D12P3C007
- ROHM Half Bridge BSM Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM120D12P2C005
- ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- ROHM N-Channel SiC Power Module 1200 V BSM180D12P2C101
- ROHM N-Channel MOSFET 1200 V Module BSM300C12P3E201
- STMicroelectronics A2F SiC Power Module 1200 V Enhancement ACEPACK 2
- STMicroelectronics A2F SiC Power Module 1200 V Enhancement ACEPACK 2 A2F12M12W2-F1