ROHM BSM 2 N-Channel SiC Power Module, 180 A, 1.2 kV Enhancement, 4-Pin BSM180D12P3C007
- N° de stock RS:
- 144-2254
- Référence fabricant:
- BSM180D12P3C007
- Fabricant:
- ROHM
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 144-2254
- Référence fabricant:
- BSM180D12P3C007
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Series | BSM | |
| Number of Elements per Chip | 2 | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current (Id) | 180 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Height | 17 mm | |
| Length | 122 mm | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 880 W | |
| Minimum Operating Temperature | -40 °C | |
| Mount Type | Surface Mount | |
| Width | 45.6 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Series BSM | ||
Number of Elements per Chip 2 | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current (Id) 180 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Height 17 mm | ||
Length 122 mm | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 880 W | ||
Minimum Operating Temperature -40 °C | ||
Mount Type Surface Mount | ||
Width 45.6 mm | ||
- Pays d'origine :
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Liens connexes
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