onsemi P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK SMP3003-DL-1E
- N° de stock RS:
- 124-5430
- Référence fabricant:
- SMP3003-DL-1E
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 800 unités)*
2 862,40 €
(TVA exclue)
3 463,20 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 - 3200 | 3,578 € | 2 862,40 € |
| 4000 + | 3,488 € | 2 790,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-5430
- Référence fabricant:
- SMP3003-DL-1E
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.2mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 280 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10mm | |
| Height | 4.5mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.2mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 280 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10mm | ||
Height 4.5mm | ||
- Pays d'origine :
- KR
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