Infineon OptiMOS P P-Channel MOSFET, 45 A, 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1
- N° de stock RS:
- 857-8696
- Référence fabricant:
- IPB45P03P4L11ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 1000 unités)*
738,00 €
(TVA exclue)
893,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,738 € | 738,00 € |
| 2000 - 4000 | 0,72 € | 720,00 € |
| 5000 + | 0,702 € | 702,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 857-8696
- Référence fabricant:
- IPB45P03P4L11ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS P | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 58 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +5 V | |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.25mm | |
| Transistor Material | Si | |
| Height | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS P | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 58 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +5 V | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 9.25mm | ||
Transistor Material Si | ||
Height 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
Statut RoHS : Exempté
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