Références fabricant

Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB180P04P403ATMA1

N° de stock RS:: 857-8674
Référence fabricant:: IPB180P04P403ATMA1
Fabricant:: Infineon

Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB180P04P403ATMA1

Offre groupée disponible

Sous-total (1 bobine de 1000 unités)*

1 607,00 €

(TVA exclue)

1 944,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles

Unité	Prix par unité	la bobine*
1000 - 1000	1,607 €	1 607,00 €
2000 - 4000	1,566 €	1 566,00 €
5000 +	1,527 €	1 527,00 €

*Prix donné à titre indicatif

N° de stock RS:: 857-8674
Référence fabricant:: IPB180P04P403ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	2.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	9.25mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	190 nC @ 10 V
	Length	10mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	4.4mm

	Sélectionner tout
	Marque Infineon
	Channel Type P
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 2.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 9.25mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 190 nC @ 10 V
	Length 10mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 4.4mm

Statut RoHS non applicable

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB180P04P403ATMA1

Infineon OptiMOS™P P-Channel Power MOSFETs

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