onsemi P-Channel MOSFET, 47 A, 60 V, 3-Pin D2PAK FQB47P06TM-AM002
- N° de stock RS:
- 124-1716
- Référence fabricant:
- FQB47P06TM-AM002
- Fabricant:
- onsemi
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 124-1716
- Référence fabricant:
- FQB47P06TM-AM002
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 26 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 84 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Transistor Material Si | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 84 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- Pays d'origine :
- CN
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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