Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07D3NG
- N° de stock RS:
- 854-515
- Référence fabricant:
- MSCSM330AM07D3NG
- Fabricant:
- Microchip
Visuel non contractuel
Sous-total (1 unité)*
733,92 €
(TVA exclue)
888,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 733,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 854-515
- Référence fabricant:
- MSCSM330AM07D3NG
- Fabricant:
- Microchip
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Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1918W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type SiC Power Module | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1918W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.
Features low RDS(on) for enhanced efficiency
Offers excellent thermal and power cycling reliability
Designed with a copper baseplate for improved heat dissipation
Incorporates a CTI600 plastic enclosure that promotes increased creepage and clearance
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