Microchip Half Bridge mSiC N-Channel SiC Power Module, 151 A, 3300 V Enhancement Mode MSCSM330AM15CD3NG
- N° de stock RS:
- 854-516
- Référence fabricant:
- MSCSM330AM15CD3NG
- Fabricant:
- Microchip
Visuel non contractuel
Sous-total (1 unité)*
540,82 €
(TVA exclue)
654,39 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 30 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 540,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 854-516
- Référence fabricant:
- MSCSM330AM15CD3NG
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1013W | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type SiC Power Module | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1013W | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Advanced SiC power module offers a phase leg design with impressive ratings, intended primarily for high-efficiency applications in power electronics, ensuring reliability and superior performance under demanding conditions.
Integrated SiC Schottky Diodes provide zero reverse recovery for reduced losses
Kelvin source design simplifies gate drive arrangements
Robust thermal management with excellent junction-to-case thermal resistance
High reliability and direct mounting capabilities ensure seamless integration
Liens connexes
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