Vishay TrenchFET N-Channel MOSFET, 208 A, 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-BE3
- N° de stock RS:
- 904-976
- Référence fabricant:
- SIR608DP-T1-BE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
2,17 €
(TVA exclue)
2,63 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 2,17 € |
| 10 - 24 | 1,42 € |
| 25 - 99 | 0,84 € |
| 100 - 499 | 0,82 € |
| 500 + | 0,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 904-976
- Référence fabricant:
- SIR608DP-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 208A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0012Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 50.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ROHS | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 208A | ||
Maximum Drain Source Voltage Vds 45V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0012Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 50.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ROHS | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay power MOSFET designed to provide efficient switching and a high power density. With a robust performance profile, it features low on-resistance, ensuring optimal operation within DC/DC converter applications.
TrenchFET Gen IV design ensures excellent efficiency
45 V Drain-source breakdown voltage for reliable performance
Low on-state resistance rated at 0.00120 Ohm at 10V
Robust continuous drain current of 208 A at 25 °C
Liens connexes
- Vishay TrenchFET N channel-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-UE3
- Vishay TrenchFET N channel-Channel Power MOSFET 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay SI34 N channel-Channel Power MOSFET -20 V P, 8-Pin PowerPAK SI3493DDV-T1-BE3
- Vishay SIR626LDP N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR626LDP-T1-BE3
- Vishay SIR680LDP N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SIR680LDP-T1-BE3