Vishay TrenchFET N-Channel Power MOSFET, 42.3 A, 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- N° de stock RS:
- 851-508
- Référence fabricant:
- SISS176LDN-T1-BE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
1,75 €
(TVA exclue)
2,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 1,75 € |
| 10 - 99 | 1,10 € |
| 100 - 499 | 0,72 € |
| 500 - 999 | 0,56 € |
| 1000 + | 0,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-508
- Référence fabricant:
- SISS176LDN-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42.3A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42.3A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET offers high efficiency in power management, featuring a robust construction that supports various electrical demands in Advanced electronic applications.
TrenchFET Gen IV technology enhances performance
Very low R DS(on) at various gate voltages ensures efficiency
Comprehensive testing guarantees reliability in operation
Lead (Pb)-free and halogen-free composition aligns with environmental standards
Liens connexes
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