Vishay TrenchFET N-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- N° de stock RS:
- 851-502
- Référence fabricant:
- SIR178DP-T1-BE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
2,56 €
(TVA exclue)
3,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 2,56 € |
| 10 - 99 | 1,64 € |
| 100 - 499 | 1,13 € |
| 500 - 999 | 0,96 € |
| 1000 + | 0,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-502
- Référence fabricant:
- SIR178DP-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- TW
The Vishay high-performance N-Channel power MOSFET designed for efficient energy management. Its primary function is to optimise conduction with low power loss, making it suitable for various power applications.
TrenchFET Gen IV technology ensures superior performance
Extremely low on-state resistance minimises conduction losses
Supports low voltage gate drive for enhanced efficiency
Completely tested for reliability under R and UIS conditions
Liens connexes
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