STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET, 126 A, 80 V N, 8-Pin PowerFLAT STL110N8F8
- N° de stock RS:
- 898-599
- Référence fabricant:
- STL110N8F8
- Fabricant:
- STMicroelectronics
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,20 €
(TVA exclue)
2,66 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 05 février 2027
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,20 € |
| 10 - 99 | 1,39 € |
| 100 - 499 | 0,95 € |
| 500 - 999 | 0,77 € |
| 1000 + | 0,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 898-599
- Référence fabricant:
- STL110N8F8
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ECOPACK2 | |
| Width | 5mm | |
| Height | 1mm | |
| Length | 5.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ECOPACK2 | ||
Width 5mm | ||
Height 1mm | ||
Length 5.8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
MSL1 grade
100% avalanche tested
Low gate charge
Liens connexes
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