STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT
- N° de stock RS:
- 248-4900
- Référence fabricant:
- STL325N4LF8AG
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 3000 unités)*
5 682,00 €
(TVA exclue)
6 876,00 €
(TVA incluse)
Ajouter 3000 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 22 février 2027
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,894 € | 5 682,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-4900
- Référence fabricant:
- STL325N4LF8AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | UL | |
| Length | 6mm | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals UL | ||
Length 6mm | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
AEC-Q101 qualified
175 degree C operating temperature
100 percent avalanche tested
Wettable flank package
Liens connexes
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