Vishay TrenchFET N-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-UE3
- N° de stock RS:
- 851-503
- Référence fabricant:
- SIR178DP-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
2,56 €
(TVA exclue)
3,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 2,56 € |
| 10 - 99 | 1,64 € |
| 100 - 499 | 1,13 € |
| 500 - 999 | 0,96 € |
| 1000 + | 0,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-503
- Référence fabricant:
- SIR178DP-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Width | 5.25mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Width 5.25mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- TW
The Vishay N-Channel MOSFET designed to provide efficient power management in various applications. Its Compact PowerPAK SO-8 packaging ensures reliability and performance, making it a versatile choice for modern electronics.
Features TrenchFET Gen IV technology for enhanced efficiency
Offers very low on-resistance to reduce power loss
Designed for operation with low voltage gate drive at 2.5 V
100% tested for R and UIS to ensure quality and reliability
Liens connexes
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V N, 8-Pin PowerPAK SIR692DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK SIR4407DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3