Vishay SI34 N-Channel Power MOSFET, -8 A, -20 V P, 8-Pin PowerPAK SI3493DDV-T1-BE3
- N° de stock RS:
- 851-500
- Référence fabricant:
- SI3493DDV-T1-BE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
0,77 €
(TVA exclue)
0,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 0,77 € |
| 10 - 99 | 0,53 € |
| 100 - 499 | 0,34 € |
| 500 - 999 | 0,20 € |
| 1000 + | 0,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-500
- Référence fabricant:
- SI3493DDV-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | -8A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | PowerPAK | |
| Series | SI34 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.024Ω | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52.2nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.25mm | |
| Length | 6.05mm | |
| Height | 1.04mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id -8A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type PowerPAK | ||
Series SI34 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.024Ω | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52.2nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.25mm | ||
Length 6.05mm | ||
Height 1.04mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- DE
The Vishay high-performance P-Channel MOSFET, designed to enable efficient power switching applications. Its capabilities ensure reliable operation within varying voltage and current ranges.
P-Channel MOSFET operates effectively at -20 V with low on-state resistance
Capable of handling pulsed drain currents up to -32 A for demanding applications
Continuous drain current ratings of -7.5 A at 25 °C facilitate thermal management
Gate-source voltage tolerance of ±8 V for added durability in diverse circuits
Liens connexes
- Vishay TrenchFET N channel-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET N channel-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay SIR626LDP N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR626LDP-T1-BE3
- Vishay SIR680LDP N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SIR680LDP-T1-BE3
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3