Vishay TrenchFET P-Channel Single MOSFETs, -6.3 A, -30 V Enhancement Mode, 4-Pin MICRO FOOT SI8409ADB-T1-E1
- N° de stock RS:
- 847-935
- Référence fabricant:
- SI8409ADB-T1-E1
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
0,96 €
(TVA exclue)
1,16 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 0,96 € |
| 10 - 99 | 0,68 € |
| 100 - 499 | 0,43 € |
| 500 - 999 | 0,30 € |
| 1000 + | 0,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 847-935
- Référence fabricant:
- SI8409ADB-T1-E1
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -6.3A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.046Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 2.77W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.6mm | |
| Height | 0.62mm | |
| Standards/Approvals | RoHS3 Compliant | |
| Width | 1.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -6.3A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.046Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 2.77W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Length 1.6mm | ||
Height 0.62mm | ||
Standards/Approvals RoHS3 Compliant | ||
Width 1.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Vishay P-Channel MOSFET that functions effectively as a load, battery, and charger switch. Its ultra-compact dimensions and low on-resistance make it highly efficient for various electronic applications.
Micro Foot packaging allows for minimal footprint without compromising performance
Low on-resistance maximises efficiency in power management
Compatible with a variety of other devices, ensuring versatility in applications
Supports high current ratings, enhancing reliability in demanding conditions
Operates within broad temperature ranges to accommodate diverse environments
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