Vishay TrenchFET N-Channel Single MOSFETs, 2.5 A, 20 V Enhancement Mode, 6-Pin TSOP-6 SI3552BDV-T1-GE3
- N° de stock RS:
- 847-934
- Référence fabricant:
- SI3552BDV-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
0,77 €
(TVA exclue)
0,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 0,77 € |
| 10 - 99 | 0,53 € |
| 100 - 499 | 0,34 € |
| 500 - 999 | 0,20 € |
| 1000 + | 0,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 847-934
- Référence fabricant:
- SI3552BDV-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP-6 | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.200Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.15W | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | RoHS3 Compliant | |
| Width | 1.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP-6 | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.200Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.15W | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals RoHS3 Compliant | ||
Width 1.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Vishay power MOSFET combines both N- and P-channel functionalities for efficient performance in various applications. This device maximises power efficiency while maintaining reliability in Compact spaces.
TrenchFET technology ensures low on-resistance for better efficiency
Offers a maximum drain-source voltage of 30 V for N-channel and -30 V for P-channel
Continuous drain current rated at up to 3.7 A for reliable operation
Leads are halogen-free, promoting environmental sustainability
Features a Compact TSOP-6 package for space-saving designs
Liens connexes
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