Vishay SI8824EDB Type N-Channel MOSFET, 2.1 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- N° de stock RS:
- 256-7399
- Référence fabricant:
- SI8824EDB-T2-E1
- Fabricant:
- Vishay
Sous-total (1 paquet de 25 unités)*
10,30 €
(TVA exclue)
12,475 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 14 décembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,412 € | 10,30 € |
| 50 - 75 | 0,403 € | 10,08 € |
| 100 - 225 | 0,309 € | 7,73 € |
| 250 - 975 | 0,302 € | 7,55 € |
| 1000 + | 0,187 € | 4,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7399
- Référence fabricant:
- SI8824EDB-T2-E1
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SI8824EDB | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.175Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Maximum Power Dissipation Pd | 0.9W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.402mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SI8824EDB | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.175Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Maximum Power Dissipation Pd 0.9W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 0.402mm | ||
Automotive Standard No | ||
Vishay SI8824EDB Series MOSFET, 20V Maximum Drain Source Voltage, 2.1A Maximum Continuous Drain Current - SI8824EDB-T2-E1
Features and Benefits:
• Continuous drain current 2.1A supports moderate load currents
• Gate threshold tuned for Vgs 5V logic-level compatibility
• Typical gate charge 2.7nC for rapid switching performance
• Maximum power dissipation 0.9W manages thermal load in compact layouts
• Forward voltage 1.2V aids in predicting conduction drop
Applications
• Ideal for high-density power distribution on SMD assemblies
• Used with microcontrollers requiring Vgs 5V switching
• Can be used for low-voltage motor drivers and load switches
• Appropriate for signal-level power control in consumer electronics
What thermal extremes can the device endure in operation?
How does the package affect board layout considerations?
What electrical limit should designers observe for drain-source voltage?
How does switching behaviour influence gate drive selection?
Liens connexes
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