Vishay TrenchFET N-Channel Power MOSFET, 375 A, 60 V Enhancement Mode, 8-Pin PowerPAK SQJQ580E-T1_GE3
- N° de stock RS:
- 851-494
- Référence fabricant:
- SQJQ580E-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
5,10 €
(TVA exclue)
6,17 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 17 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 5,10 € |
| 10 - 99 | 3,34 € |
| 100 - 499 | 2,50 € |
| 500 - 999 | 2,17 € |
| 1000 + | 2,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-494
- Référence fabricant:
- SQJQ580E-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1mm | |
| Width | 5mm | |
| Length | 6mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1mm | ||
Width 5mm | ||
Length 6mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- DE
The Vishay automotive MOSFET is an Automotive N-Channel device designed for reliable power management. It excels in high-temperature conditions, ensuring efficient performance across diverse applications in the automotive sector.
TrenchFET Gen V technology enhances power efficiency
AEC-Q101 qualified for stringent automotive standards
Maximum drain-source voltage of 80 V ensures robust operation
Low on-state resistance delivers efficient performance
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