Vishay SQD P-Channel Single MOSFETs, 50 A, 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3
- N° de stock RS:
- 829-350
- Référence fabricant:
- SQD50P04-13L_NE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
0,85 €
(TVA exclue)
1,03 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 24 | 0,85 € |
| 25 - 99 | 0,83 € |
| 100 - 499 | 0,80 € |
| 500 - 999 | 0,70 € |
| 1000 + | 0,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-350
- Référence fabricant:
- SQD50P04-13L_NE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | SQD | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.013Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 6.5mm | |
| Height | 2.3mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series SQD | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.013Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 6.5mm | ||
Height 2.3mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- GB
The Vishay power MOSFET provides high-performance switching capabilities, specifically designed for automotive applications, ensuring reliability and efficiency under demanding conditions.
TrenchFET technology enhances power efficiency
Low thermal resistance enables effective heat management
Robust AEC-Q101 qualification assures high-quality performance
100% Rg and UIS tested for reliability in operation
Liens connexes
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