Vishay TrenchFET P-Channel MOSFET, -101.4 A, -40 V Enhancement, 8-Pin PowerPAK SIR4407DP-T1-UE3
- N° de stock RS:
- 904-975
- Référence fabricant:
- SIR4407DP-T1-UE3
- Fabricant:
- Vishay
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
1,34 €
(TVA exclue)
1,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 février 2027
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 1,34 € |
| 10 - 24 | 0,88 € |
| 25 - 99 | 0,52 € |
| 100 - 499 | 0,50 € |
| 500 + | 0,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 904-975
- Référence fabricant:
- SIR4407DP-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -101.4A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88.3W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 82.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -101.4A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88.3W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 82.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay P-Channel MOSFET serves as a reliable electronic switch, designed to manage high voltage and current efficiently. It is specifically engineered for various power management applications, ensuring robust performance in demanding environments.
Operates at a drain-source voltage of -40 V for enhanced reliability
Ultra-low on-state resistance ensures minimal power loss during operation
Fully tested for R and UIS to guarantee performance under stressed conditions
Offers a maximum power dissipation rating of 5.0 W, allowing for cooler operation
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