Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3
- N° de stock RS:
- 790-413
- Référence fabricant:
- MXP120A080SE-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,03 €
(TVA exclue)
9,72 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,03 € |
| 10 - 99 | 5,66 € |
| 100 - 499 | 4,73 € |
| 500 - 799 | 4,21 € |
| 800 + | 3,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 790-413
- Référence fabricant:
- MXP120A080SE-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 185W | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | 4.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Width | 10.28mm | |
| Standards/Approvals | RoHS | |
| Length | 9.23mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 185W | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf 4.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Width 10.28mm | ||
Standards/Approvals RoHS | ||
Length 9.23mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs improves reliability
Gate-source voltage of -10 to +22 V allows flexible operation
Continuous drain current of 32 A ensures effective functionality
Liens connexes
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