Vishay MXP N channel-Channel Power Semiconductor, 52 A, 1200 V N, 7-Pin TO-263-7L MXP120A045SE-T1GE3
- N° de stock RS:
- 736-648
- Référence fabricant:
- MXP120A045SE-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
13,91 €
(TVA exclue)
16,83 €
(TVA incluse)
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Ruban(s) | le ruban |
|---|---|
| 1 - 4 | 13,91 € |
| 5 + | 13,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-648
- Référence fabricant:
- MXP120A045SE-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power Semiconductor | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MXP | |
| Mount Type | SMD | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Power Dissipation Pd | 268W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power Semiconductor | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MXP | ||
Mount Type SMD | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Power Dissipation Pd 268W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
The Vishay N-Channel Sic Mosfet provides exceptional performance for high-power solar inverters and energy storage systems. This robust component prioritises operational safety by offering a reliable 3 microsecond short circuit withstand time for demanding electronics.
Fast switching speed for high efficiency
Advanced silicon carbide technology
Enhanced reliability for uninterruptible power supplies
Compliant material categorization for industrial standards
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