Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3
- N° de stock RS:
- 790-412
- Référence fabricant:
- MXP120A063SE-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,94 €
(TVA exclue)
10,82 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,94 € |
| 10 - 99 | 6,50 € |
| 100 - 499 | 5,41 € |
| 500 - 799 | 4,82 € |
| 800 + | 4,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 790-412
- Référence fabricant:
- MXP120A063SE-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-263-7L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 221W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 10.28mm | |
| Length | 9.23mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-263-7L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 221W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 10.28mm | ||
Length 9.23mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
The Vishay High performance N-Channel SiC MOSFET is designed for efficient power management in demanding applications. It excels in its Ability to handle high voltages and ensure reliable operation.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs ensures reliability during faults
Operating voltage range for gate-source control optimises flexibility
Continuous drain current capability supports robust energy transfer
Liens connexes
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