Vishay MaxSiC N channel-Channel MOSFET, 31 A, 1200 V N, 4-Pin TO-247AD MXP120A080SL-GE3
- N° de stock RS:
- 790-418
- Référence fabricant:
- MXP120A080SL-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,86 €
(TVA exclue)
10,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,86 € |
| 10 - 99 | 6,25 € |
| 100 - 599 | 5,21 € |
| 600 - 1199 | 4,64 € |
| 1200 + | 4,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 790-418
- Référence fabricant:
- MXP120A080SL-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-247AD | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 174W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Length | 23.6mm | |
| Width | 16.13mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-247AD | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 174W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Length 23.6mm | ||
Width 16.13mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay 1200 V N-Channel SiC MOSFET is engineered for high-performance power applications, offering efficiency, speed, and reliability. Its Advanced design ensures robust operation under demanding conditions while maintaining eco-friendly compliance.
Fast switching speed enhances overall efficiency
Short circuit withstand time up to 3 μs ensures reliability
Rated for a maximum drain-source voltage of 1200 V
Liens connexes
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