Vishay MaxSiC N channel-Channel MOSFET, 52 A, 1200 V N, 7-Pin TO-263-7L MXPQ120A045SE-1GE3
- N° de stock RS:
- 790-411
- Référence fabricant:
- MXPQ120A045SE-1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
10,69 €
(TVA exclue)
12,93 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 10,69 € |
| 10 - 99 | 8,38 € |
| 100 - 499 | 6,97 € |
| 500 - 799 | 6,22 € |
| 800 + | 5,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 790-411
- Référence fabricant:
- MXPQ120A045SE-1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.9V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Power Dissipation Pd | 268W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.28mm | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS | |
| Length | 9.23mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.9V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Power Dissipation Pd 268W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.28mm | ||
Height 4.5mm | ||
Standards/Approvals RoHS | ||
Length 9.23mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- TW
The Vishay 1200 V N-Channel SiC MOSFET is designed for demanding power applications, combining speed, reliability, and compliance. Its Advanced construction ensures efficient performance while meeting strict automotive and environmental standards.
AEC-Q101 qualified for automotive-grade reliability
Fast switching speed for improved efficiency
Halogen free for safer and eco-friendly use
Liens connexes
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