STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET, 44 A, 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- N° de stock RS:
- 762-552
- Référence fabricant:
- ST8L65N065DM9
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
3,91 €
(TVA exclue)
4,73 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,91 € |
| 10 - 24 | 3,79 € |
| 25 - 99 | 3,72 € |
| 100 - 499 | 3,18 € |
| 500 + | 2,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-552
- Référence fabricant:
- ST8L65N065DM9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFlat HV | |
| Series | ST8L65N0 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 223W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFlat HV | ||
Series ST8L65N0 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 223W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.95mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
Liens connexes
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