STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V
- N° de stock RS:
- 213-3942
- Référence fabricant:
- SCTL35N65G2V
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
14,05 €
(TVA exclue)
17,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 décembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 14,05 € |
| 50 - 99 | 13,68 € |
| 100 - 249 | 13,33 € |
| 250 + | 13,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 213-3942
- Référence fabricant:
- SCTL35N65G2V
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTL35N65G2V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTL35N65G2V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency
Liens connexes
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