Vishay TrenchFET P-Channel MOSFET, -267 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5203DP-T1-UE3
- N° de stock RS:
- 735-200
- Référence fabricant:
- SIR5203DP-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 unité)*
1,81 €
(TVA exclue)
2,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,81 € |
| 10 - 24 | 1,18 € |
| 25 - 99 | 0,61 € |
| 100 - 499 | 0,60 € |
| 500 + | 0,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-200
- Référence fabricant:
- SIR5203DP-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -267A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0018Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104.1W | |
| Typical Gate Charge Qg @ Vgs | 340nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -267A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0018Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104.1W | ||
Typical Gate Charge Qg @ Vgs 340nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Height 1.12mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay P channel 20 V MOSFET is tailored for efficient load switching in Compact electronic designs. it combines reliable performance with eco-friendly compliance, ensuring safe and sustainable operation. its low-voltage capability makes it Ideal for modern consumer and automotive applications requiring dependable switching solutions.
Ensures RoHS compliance for environmental safety
Delivers halogen free construction for safer usage
Offers suitability for load switch applications
Liens connexes
- Vishay TrenchFET N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SIR532DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5404DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5205DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5406DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
