Vishay TrenchFET N channel-Channel MOSFET, 158 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5404DP-T1-UE3
- N° de stock RS:
- 735-216
- Référence fabricant:
- SIR5404DP-T1-UE3
- Fabricant:
- Vishay
Visuel non contractuel
Offre groupée disponible
Sous-total (1 unité)*
1,81 €
(TVA exclue)
2,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,81 € |
| 10 - 24 | 1,18 € |
| 25 - 99 | 0,61 € |
| 100 - 499 | 0,60 € |
| 500 + | 0,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-216
- Référence fabricant:
- SIR5404DP-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0026Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61.5nC | |
| Maximum Power Dissipation Pd | 83.3W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0026Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61.5nC | ||
Maximum Power Dissipation Pd 83.3W | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.25mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.
Provides 100% Rg and UIS testing for proven reliability
Ensures RoHS compliance for environmental safety
Delivers halogen-free construction for eco-friendly design
Supports synchronous rectification for efficient power conversion
Enables motor drive control with dependable switching performance
Liens connexes
- Vishay TrenchFET N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SIR532DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5406DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5207DP-T1-UE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5203DP-T1-UE3