ROHM RS6G122CH Type N-Channel Single MOSFETs, -40 V Enhancement, 8-Pin HSOP-8 RS6G122CHTB1
- N° de stock RS:
- 687-439
- Référence fabricant:
- RS6G122CHTB1
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
2,48 €
(TVA exclue)
3,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 26 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,24 € | 2,48 € |
| 20 - 48 | 1,09 € | 2,18 € |
| 50 - 198 | 0,985 € | 1,97 € |
| 200 - 998 | 0,79 € | 1,58 € |
| 1000 + | 0,775 € | 1,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-439
- Référence fabricant:
- RS6G122CHTB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | HSOP-8 | |
| Series | RS6G122CH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 3 mm | |
| Length | 3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type HSOP-8 | ||
Series RS6G122CH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 3 mm | ||
Length 3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET is designed to deliver high efficiency in demanding applications. Featuring a maximum operating voltage of 40V and capable of handling a continuous drain current of up to 225A, it is ideal for use in motor drives and DC/DC converters. The robust HSOP8 package ensures effective thermal management with a low thermal resistance, promoting reliable performance even under high load conditions. With stringent RoHS compliance, the device is suitable for environmentally-conscious designs while guaranteeing consistent reliability and safety in various electronic applications.
Low on resistance of 1.20mΩ, enhancing efficiency
High power package (HSOP8) for effective thermal dissipation
Pb free plating meets RoHS standards for environmental safety
Halogen-free construction ensures compliance with safety regulations
100% Rg and UIS tested for reliability under harsh conditions
Designed for high-performance applications with extreme current capabilities
Avalanche-rated for single pulse capability up to 40A, ensuring robustness
Integrated safety features address potential failure scenarios
Liens connexes
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