ROHM AW2K21 Type N-Channel Single MOSFETs, 30 V Enhancement, 22-Pin WLCSP-2020 AW2K21AR
- N° de stock RS:
- 687-361
- Référence fabricant:
- AW2K21AR
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
2,77 €
(TVA exclue)
3,352 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,385 € | 2,77 € |
| 20 - 48 | 1,225 € | 2,45 € |
| 50 - 198 | 1,10 € | 2,20 € |
| 200 - 998 | 0,89 € | 1,78 € |
| 1000 + | 0,865 € | 1,73 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-361
- Référence fabricant:
- AW2K21AR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | AW2K21 | |
| Package Type | WLCSP-2020 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 4.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 2cm | |
| Height | 0.5cm | |
| Width | 2 cm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 30V | ||
Series AW2K21 | ||
Package Type WLCSP-2020 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 4.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 2cm | ||
Height 0.5cm | ||
Width 2 cm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
The ROHM Power MOSFET is engineered for optimal performance in high-efficiency applications. This Nch common source MOSFET supports a maximum drain-to-source voltage of 30V and a continuous drain current of ±20A, making it an ideal choice for load switching and protection functionalities. This device is also compliant with RoHS standards, contributing to environmentally friendly design practices in modern electronics.
Low on resistance of 4.0mΩ maximises power efficiency
High power capacity with a power dissipation rating of 1.6W
Optimised for small package applications with a WLCSP design
Pb free lead plating enhances solderability and environmental compliance
Backside coating reduces the risk of corrosion and improves durability
Wide operating temperature range from -55°C to +150°C ensures reliability in varied conditions
Includes ESD protection features to safeguard against static discharge
Liens connexes
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