ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL
- N° de stock RS:
- 687-362
- Référence fabricant:
- RD3E08BBJHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
3,31 €
(TVA exclue)
4,006 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,655 € | 3,31 € |
| 20 - 48 | 1,46 € | 2,92 € |
| 50 - 198 | 1,31 € | 2,62 € |
| 200 - 998 | 1,055 € | 2,11 € |
| 1000 + | 1,03 € | 2,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-362
- Référence fabricant:
- RD3E08BBJHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TO-252 (TL) | |
| Series | RD3E08BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TO-252 (TL) | ||
Series RD3E08BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.
Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss
Pulsed drain current capability of ±160A, accommodating high-demand applications
Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control
Assemblable in a DPAK package for efficient thermal management and compact footprint
Avalanche tested for improved reliability in high-stress electrical environments
AEC Q101 qualified, making it ideal for safety-critical automotive applications.
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