ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL
- N° de stock RS:
- 687-355
- Référence fabricant:
- RD3P08BBLHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
6,84 €
(TVA exclue)
8,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 96 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 3,42 € | 6,84 € |
| 20 - 98 | 3,02 € | 6,04 € |
| 100 - 198 | 2,705 € | 5,41 € |
| 200 + | 2,125 € | 4,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-355
- Référence fabricant:
- RD3P08BBLHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 (TL) | |
| Series | RD3P08BBLHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 (TL) | ||
Series RD3P08BBLHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.5mm | ||
Height 2.3mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for robust applications requiring efficient switching. With a maximum voltage rating of 100V and a continuous drain current of 80A, this component delivers reliable power management. Its low on-resistance of just 6.2mΩ ensures minimal energy loss during operation, which is critical for enhancing the efficiency of power supplies. Supporting a wide range of commutated current applications, this MOSFET is AEC-Q101 qualified, making it suitable for automotive environments. Its compact DPAK package allows for improved thermal performance in confined spaces.
Low on resistance enhances energy efficiency, reducing heat generation
100V drain-source voltage rating supports diverse high-voltage applications
Continuous drain current of 80A allows for dependable performance under heavy loads
AEC Q101 qualified, assuring high reliability for automotive applications
Compact TO-252 package facilitates better thermal management and space-saving designs
Robust avalanche capability ensures safety during transient conditions
High power dissipation of 142W accommodates demanding operational needs
Pb free plating and RoHS compliant, aligning with environmentally friendly practices
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