Vishay SIS5712DN N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3
- N° de stock RS:
- 653-112
- Référence fabricant:
- SIS5712DN-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 857,00 €
(TVA exclue)
2 247,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 6 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,619 € | 1 857,00 € |
*Prix donné à titre indicatif
Produit de remplacement
Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:
1 ruban de 1
1,36 €
(TVA exclue)
1,65 €
(TVA incluse)
- N° de stock RS:
- 653-112
- Référence fabricant:
- SIS5712DN-T1-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SIS5712DN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0555Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Power Dissipation Pd | 39.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Height | 1.04mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SIS5712DN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0555Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Power Dissipation Pd 39.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Height 1.04mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIS5712DN Series Single MOSFETs, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIS5712DN-T1-GE3
Features and Benefits:
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom
Applications
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits
What thermal range can it withstand during operation?
How does the gate specification affect driver selection?
What electrical characteristic governs switching losses during transitions?
How does the device package assist PCB assembly?
Liens connexes
- Vishay SIS5712DN N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5712DP N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3
- Vishay SIR5712DP N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SI2122DS N-Channel Single MOSFETs 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3
- Vishay SI3122DV N-Channel Single MOSFETs 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3
- Vishay SISS5812DN N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3
- Vishay SIB4122DK N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK SIB4122DK-T1-GE3
- Vishay SIRA10DDP N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA10DDP-T1-GE3

