Vishay SIS5712DN N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3

N° de stock RS:: 653-112
Référence fabricant:: SIS5712DN-T1-GE3
Fabricant:: Vishay

Vishay SIS5712DN N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3

Sous-total (1 bobine de 3000 unités)*

1 857,00 €

(TVA exclue)

2 247,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 6 000 unité(s) expédiée(s) à partir du 09 octobre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,619 €	1 857,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-112
Référence fabricant:: SIS5712DN-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	150V
	Series	SIS5712DN
	Package Type	PowerPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0555Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	5.8nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	39.1W
	Maximum Operating Temperature	150°C
	Standards/Approvals	Lead (Pb)-Free
	Height	1.04mm
	Width	3.3mm
	Length	3.3mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 150V
	Series SIS5712DN
	Package Type PowerPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0555Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 5.8nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 39.1W
	Maximum Operating Temperature 150°C
	Standards/Approvals Lead (Pb)-Free
	Height 1.04mm
	Width 3.3mm
	Length 3.3mm
	Automotive Standard No

Datasheet - SIS5712DN-T1-GE3

Pays d'origine :: CN

Vishay SIS5712DN Series Single MOSFETs, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIS5712DN-T1-GE3

This single MOSFET device is a surface-mount N-channel transistor intended for high-voltage switching and power-management roles in industrial electronics. It operates over a wide thermal range suitable for demanding environments and is provided in a compact PowerPAK package for space-conscious board layouts. The device is lead-free and offers enhancement-mode switching performance for conventional gate-driven applications.

Features and Benefits:

• 150V drain tolerance enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom

Applications

• Suitable for industrial motor-drive stages
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits

What thermal range can it withstand during operation?

It is rated to function from -55°C up to 150°C, accommodating extreme ambient and junction temperatures.

How does the gate specification affect driver selection?

The 20V maximum gate-source rating defines the maximum permissible gate-drive amplitude and informs driver voltage margins to avoid overstress.

What electrical characteristic governs switching losses during transitions?

The typical gate charge of 5.8nC influences the required drive energy and switching speed, affecting switching-loss calculations.

How does the device package assist PCB assembly?

The PowerPAK surface-mount format supports automated placement and soldering while enabling efficient thermal coupling to the PCB copper.