Vishay SIR4156LDP Type N-Channel Single MOSFETs, 25.7 A, 100 V Enhancement, 8-Pin PowerPAK SIR4156LDP-T1-GE3
- N° de stock RS:
- 653-190
- Référence fabricant:
- SIR4156LDP-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 362,00 €
(TVA exclue)
1 647,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,454 € | 1 362,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-190
- Référence fabricant:
- SIR4156LDP-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 25.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SIR4156LDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Height | 1.72mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 25.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SIR4156LDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Height 1.72mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.
Pb Free
Halogen free
RoHS compliant
Liens connexes
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